Silicon carbide

Silicon carbide
	A laboratory-grown synthetic SiC monocrystal
Names
	IUPAC name Methanidylidynesilanylium
	Preferred IUPAC name Silicon carbide
	Other names Carborundum ; Moissanite
Identifiers
CAS Number	409-21-2 ;
3D model (JSmol)	Interactive image;
ChEBI	CHEBI:29390 ;
ChemSpider	9479 ;
ECHA InfoCard	100.006.357
EC Number	206-991-8;
Gmelin Reference	13642
MeSH	Silicon+carbide
PubChem CID	9863;
RTECS number	VW0450000;
UNII	WXQ6E537EW ;
CompTox Dashboard (EPA)	DTXSID5052751 ;
	InChI InChI=1S/CSi/c1-2 Key: HBMJWWWQQXIZIP-UHFFFAOYSA-N ; Key: HBMJWWWQQXIZIP-UHFFFAOYAF; InChI=1/CSi/c1-2;
	SMILES [C-]#[Si+];
Properties
Chemical formula	SiC
Molar mass	40.096 g/mol
Appearance	Yellow to green to bluish-black, iridescent crystals
Density	3.16 g⋅cm−3 (hex.)
Melting point	2,830 °C (5,130 °F; 3,100 K) (decomposes)
Solubility	Insoluble in water, soluble in molten alkalis and molten iron
Electron mobility	~900 cm2/(V⋅s) (all polytypes)
Magnetic susceptibility (χ)	−12.8 × 10−6 cm3/mol
Refractive index (nD)	2.55 (infrared; all polytypes)
Hazards
	GHS labelling:fibres
Pictograms
Signal word	Danger
Hazard statements	H350i
Precautionary statements	P201, P202, P260, P261, P264, P270, P271, P280, P281, P302+P352, P304+P340, P305+P351+P338, P308+P313, P312, P314, P321, P332+P313, P337+P313, P362, P403+P233, P405, P501
NFPA 704 (fire diamond)	1 0 0
	NIOSH (US health exposure limits):
PEL (Permissible)	TWA 15 mg/m3 (total) TWA 5 mg/m3 (resp)
REL (Recommended)	TWA 10 mg/m3 (total) TWA 5 mg/m3 (resp)
IDLH (Immediate danger)	N.D.
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). verify (what is ?) Infobox references

Silicon carbide (SiC), also known as carborundum (/ˌkɑːrbəˈrʌndəm/), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.

Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.

^ ^a ^b ^c ^d NIOSH Pocket Guide to Chemical Hazards. "#0555". National Institute for Occupational Safety and Health (NIOSH).
^ ^a ^b Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, Florida: CRC Press. p. 4.88. ISBN 1-4398-5511-0.
^ Pubchem. "Silicon carbide". pubchem.ncbi.nlm.nih.gov. Retrieved 2018-11-27.
^ Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, Florida: CRC Press. p. 4.135. ISBN 1-4398-5511-0.
^ Cite error: The named reference ioffe was invoked but never defined (see the help page).
^ "C&L Inventory". echa.europa.eu. Retrieved 12 December 2021.

[PGCH-1] NIOSH Pocket Guide to Chemical Hazards. "#0555". National Institute for Occupational Safety and Health (NIOSH).

[b92-2] Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, Florida: CRC Press. p. 4.88. ISBN 1-4398-5511-0.

[3] Pubchem. "Silicon carbide". pubchem.ncbi.nlm.nih.gov. Retrieved 2018-11-27.

[4] Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, Florida: CRC Press. p. 4.135. ISBN 1-4398-5511-0.

[ioffe-5] Cite error: The named reference ioffe was invoked but never defined (see the help page).

[6] "C&L Inventory". echa.europa.eu. Retrieved 12 December 2021.

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